| PART |
Description |
Maker |
| 24WC128 CAT24WC128 CA24WC128PI-1.8TE13 CA24WC128KI |
128K-Bit I2C Serial CMOS E2PROM
128K-BitI2CSerialCMOSE2PROM
1.8V-6.0V 128K-bit IIC serial CMOS EEPROM
2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
|
CatalystSemiconductor
CATALYST[Catalyst Semiconductor]
|
| CAT24WC129 CAT24WC129KA-1.8TE13 CAT24WC129KA-TE13 |
128K-Bit I2C Serial CMOS E2PROM
1.8V-6.0V 128K-bit IIC serial CMOS EEPROM
2.5V-6.0V 128K-bit IIC serial CMOS EEPROM
3.0V-5.5V 128K-bit IIC serial CMOS EEPROM
|
CATALYST[Catalyst Semiconductor]
|
| N01L83W2AT5I N01L83W2AT5IT N01L83W2AN25I N01L83W2A |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K ? 8 bit
1Mb Ultra-Low Power Asynchronous CMOS SRAM 128K × 8 bit
|
ON Semiconductor
|
| AM28F010A AM28F010A-120EC AM28F010A-120ECB AM28F01 |
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt/ Bulk Erase Flash Memory with Embedded Algorithms
0.5MM, ZIF, SMT, 42 POSITION, EMBOSS TAPE T&R RoHS Compliant: Yes
CAP 100PF 1500V 20% NP0(C0G) SMD-1808 TR-13 PLATED-NI/SN
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位128亩8位）CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 1兆位28亩8位）的CMOS 12.0伏，整体擦除闪存的嵌入式记忆算法
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 200 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 120 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 90 ns, PQCC32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 150 ns, PDSO32
1 Megabit (128 K x 8-Bit) CMOS 12.0 Volt, Bulk Erase Flash Memory with Embedded Algorithms 128K X 8 FLASH 12V PROM, 70 ns, PDSO32
|
Advanced Micro Devices, Inc.
SPANSION LLC
ADVANCED MICRO DEVICES INC
|
| M36W216BI70ZA1T M36W216TI70ZA1T M36W216TI85ZA1T M3 |
16 Mbit 1Mb x16, Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM, Multiple Memory Product
16 MBIT (1MB X16, BOOT BLOCK) FLASH MEMORY AND 2 MBIT (128K X16) SRAM, MULTIPLE MEMORY PRODUCT
16 Mbit 1Mb x16 / Boot Block Flash Memory and 2 Mbit 128Kb x16 SRAM / Multiple Memory Product
|
ST Microelectronics
|
| AM29F200AT-55EC AM29F200AT-55EE AM29F200AT-55EI AM |
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 120 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO44
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 55 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位56亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 150 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 120 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 2兆位256亩x 8-Bit/128亩x 16位）.0伏的CMOS只，引导扇区闪存
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 256K X 8 FLASH 5V PROM, 90 ns, PDSO48
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory 128K X 16 FLASH 5V PROM, 70 ns, PDSO48
|
Advanced Micro Devices, Inc.
ADVANCED MICRO DEVICES INC
|
| M295V160BB70N1T M29F160 M295V160BB55N1T M295V160BT |
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory
16 Mbit 2Mb x8 or 1Mb x16 / Boot Block Single Supply Flash Memory
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PLCC -25 to 85
16-Bit Bus Transceiver with 3-State Outputs 56-BGA MICROSTAR JUNIOR -40 to 85 16兆位Mb x81兆x16插槽，启动座单电源闪
16 Mbit 2Mb x8 or 1Mb x16, Boot Block Single Supply Flash Memory 16兆位Mb x81兆x16插槽，启动座单电源闪
8-Bit, 0.1 us Dual MDAC, Parallel Input, Fast Control Signalling for DSP, Easy Micro I/F 20-PDIP -40 to 85 16兆位Mb x81兆x16插槽，启动座单电源闪
16-Bit Transparent D-Type Latch With 3-State Outputs 48-TVSOP -40 to 85 16兆位Mb x8兆x16插槽，启动座单电源闪
16-Bit Edge-Triggered D-Type Flip-Flop With 3-State Outputs 48-TVSOP -40 to 85 16兆位Mb x8兆x16插槽，启动座单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| R1LP0108ESA-5SI R1LP0108ESF-7SR R1LP0108ESF-7SI R1 |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| R1LP0108ESP-5SIB0 R1LP0108ESP-5SIS0 R1LP0108ESP-5S |
1Mb Advanced LPSRAM (128k word x 8bit)
|
Renesas Electronics Corporation
|
| MX27C1000A MX27C1000AMC-10 MX27C1000AMC-12 MX27C10 |
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PQCC32
1M-BIT [128K x 8] CMOS EPROM 128K X 8 OTPROM, 90 ns, PDIP32
Single Output LDO, 3.0A, Fixed(1.5V), Fast Transient Response, Low Quiescent Current 5-DDPAK/TO-263 -40 to 125
|
Macronix International Co., Ltd.
MCNIX[Macronix International]
|
| M29F080D M29F080D55N6T -M29F080D70M1T |
8 Mbit (1Mb x8 / Uniform Block) 5V Supply Flash Memory
8 Mbit (1Mb x8, Uniform Block) 5V Supply Flash Memory 8兆（1兆8，统一座）5V电源快闪记忆
|
ST Microelectronics
|
|
